s2000afi high voltage fast-switching npn power transistor n stmicroelectronics preferred salestype n high voltage capability n u.l. recognised ISOWATT218 package (u.l. file # e81734 (n). applications: n horizontal deflection for colour tv description the s2000afi is manufactured using multiepitaxial mesa technology for cost-effective high performance and uses a hollow emitter structure to enhance switching speeds. internal schematic diagram december 1999 absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v be =0) 1500 v v ceo collector-emitter voltage (i b = 0) 700 v v ebo emitter-base voltage (i c =0) 10 v i c collector current 8 a i cm collector peak current (t p <5ms) 15 a p tot total dissipation at t c =25 o c50w t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c 1 2 3 ISOWATT218 ? 1/6
thermal data r thj-case thermal resistance junction-case max 2.5 o c/w electrical characteristics (t case =25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i ces collector cut-off current (v be =0) v ce =1500v t c =125 o c v ce =1500v 1 2 ma ma i ebo emitter cut-off current (i c =0) v eb =5v 100 m a v ceo(sus ) * collector-emitter sustaining voltage (i b =0) i c = 100 ma 700 v v ebo emitter base voltage (i c =0) i e =10ma 10 v v ce(sat) * collector-emitter saturation voltage i c =4.5a i b =2a 1 v v be(s at) * base-emitter saturation voltage i c =4.5a i b =2a 1.3 v t s t f inductive load storage time fall time i c =4.5a h fe =2.5 v cc =140v l c =0.9mh l b =3 m h 7 0.55 m s m s f t transition frequency i c =0.1a v ce =5v f=5mhz 7 mhz * pulsed: pulse duration = 300 m s, duty cycle 1.5 % safe operating area. thermal impedance s2000afi 2/6
dc current gain base emitter saturation voltage switching time inductive load (see figure 1) collector emitter saturation voltage switching time inductive load s2000afi 3/6
figure 1: inductive load switching test circuit. s2000afi 4/6
dim. mm inch min. typ. max. min. typ. max. a 5.35 5.65 0.211 0.222 c 3.30 3.80 0.130 0.150 d 2.90 3.10 0.114 0.122 d1 1.88 2.08 0.074 0.082 e 0.75 0.95 0.030 0.037 f 1.05 1.25 0.041 0.049 f2 1.50 1.70 0.059 0.067 f3 1.90 2.10 0.075 0.083 g 10.80 11.20 0.425 0.441 h 15.80 16.20 0.622 0.638 l 9 0.354 l1 20.80 21.20 0.819 0.835 l2 19.10 19.90 0.752 0.783 l3 22.80 23.60 0.898 0.929 l4 40.50 42.50 1.594 1.673 l5 4.85 5.25 0.191 0.207 l6 20.25 20.75 0.797 0.817 n 2.1 2.3 0.083 0.091 r 4.6 0.181 dia 3.5 3.7 0.138 0.146 p025c/a ISOWATT218 mechanical data - weight : 4.9 g (typ.) - maximum torque (applied to mounting flange) recommended: 0.8 nm; maximum: 1 nm - the side of the dissipator must be flat within 80 m m s2000afi 5/6
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specification mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a trademark of stmicroelectronics ? 1999 stmicroelectronics printed in italy all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com . s2000afi 6/6
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